Zinc-doped gallium phosphide nanowires for photovoltaic structures

S. Hasenöhrl; P. Eliáš; J. Šoltýs; R. Stoklas; A. Dujavová-Laurenčíková; J. Novák

doi:10.1016/j.apsusc.2012.09.109

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Zinc-doped gallium phosphide nanowires for photovoltaic structures

S. Hasenöhrl P. Eliáš J. Šoltýs R. Stoklas A. Dujavová-Laurenčíková J. Novák

Year: 2012 Journal: Applied Surface Science Vol: 269 Pages: 72-76 Publisher: Elsevier BV

DOI: 10.1016/j.apsusc.2012.09.109

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Keywords:

Materials science Heterojunction Doping Nanowire Zinc Tapering Optoelectronics Chemical vapor deposition Diethylzinc Gallium phosphide Mole fraction Analytical Chemistry (journal) Chemistry Metallurgy

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Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

solar cell performance optimization

Physical Sciences → Engineering → Electrical and Electronic Engineering

Zinc-doped gallium phosphide nanowires for photovoltaic structures

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