Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation

Abstract

Heavily boron-doped silicon single crystals have been grown successfully by the Czochralski (CZ) method. The limit of boron concentration in the silicon melt for dislocation-free silicon crystal growth and segregation with heavy boron doping were investigated. It was found that a dislocation-free silicon crystal could be obtained even when the initial boron concentration in the silicon melt was up to 3.8×10 20 atoms/cm 3 with a solidified fraction of about 0.5. The lowest resistivity of the dislocation-free B-doped silicon crystal was about 0.7 m Ω·cm. It is confirmed that the equilibrium segregation coefficient of boron decreases from 0.8 with heavy boron doping.