Graphene based nanomaterials for VLSI interconnect and energy-storage applications

Abstract

As IC feature sizes continue to be scaled below 45 nanometer, copper wires exhibit significant "size effects" resulting in a sharp rise in their resistivity, which, in turn, has adverse impact both on their performance as well as reliability--in the form of current carrying capacity. This limitation of copper interconnects has been highlighted by leading semiconductor companies around the world as well as in the International Technology Roadmap for Semiconductors (ITRS), and threatens to slow down or even stall the traditional growth of the semiconductor and related industries.