JOURNAL ARTICLE

The temperature dependence of electrical and optical properties in InAs/GaAs and GaAs/InAs/AlAs self-assembled quantum dots

Adenilson J. ChiquitoMarcelo G. de SouzaIhosvany CampsY. Galvão Gobato

Year: 2006 Journal:   Semiconductor Science and Technology Vol: 21 (7)Pages: 912-917   Publisher: IOP Publishing

Abstract

In this paper, we report on the effects of the environment on the properties of an ensemble of InAs self-assembled quantum dots. The properties presented by the electrons confined at the dots can be tuned by adjusting some parameters of the environment. Using capacitance–voltage and photoluminescence measurements, we observed an increase in the thermal stability of zero-dimensional electron gas when the dots were grown in a period of a GaAs/AlAs superlattice. We believe that the parameter responsible for the thermal stability observed here was the increase of the electrical impedance of the device. In addition, electrical and optical measurements enabled us to study the thermal stability of electrons located at the dots grown in the GaAs bulk and in the aforementioned superlattice.

Keywords:
Quantum dot Optoelectronics Condensed matter physics Materials science Quantum well Physics Optics Laser

Metrics

6
Cited By
1.38
FWCI (Field Weighted Citation Impact)
23
Refs
0.82
Citation Normalized Percentile
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Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Quantum and electron transport phenomena
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Quantum Dots Synthesis And Properties
Physical Sciences →  Materials Science →  Materials Chemistry
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