4H-SiC Trench Structure Schottky Diodes

Abstract

This paper presents three different structures of Schottky diodes that were fabricated with low Schottky barrier heights. To reduce the forward voltage drop, the introduction of a lower Schttoky barrier is necessary. One of key issues associated with diodes having a low Schottky barrier height and a planar structure is an excessively high leakage current. By introducing the novel trench structure, the leakage current was reduced to a reasonable level. Furthermore it was confirmed that they have minimal switching time during turn-off and high avalanche capability. Thus trench structure Schottky diodes are able to reduce not only switching losses but also conductive losses and demonstrate sufficient robustness.