Evaluation and Signal Conditioning of Piezoresistive Silicon Pressure Sensor

Abstract

The piezoresistive silicon pressure sensor used in this work is developed by Technical University Berlin. It is mainly composed of a silicon-membrane and four implanted piezoresistors connected in form of a Wheatstone bridge. After wire bonding, the sensor was evaluated in a climate cabinet at different temperatures and pressures. The characteristic curve of the sensor shows its good linearity and strong dependence on the temperature. The sensor ́s temperature coefficient of sensitivity and zero shift were compensated using ASIC MLX90308. The experimental results show that this method of compensation accurately solved the sensors temperature dependence problems.