Thin film transistors for large area electronics

Abstract

This paper reviews thin film transistor technology with a detailed emphasis on amorphous silicon (a-Si:H) devices. The fabrication and large area technology issues are described. The materials parameters that affect device performance are dominated by interface effects and the gate dielectric. The problem of characterizing the interfaces is discussed. Applications in liquid crystal displays (LCD) and image sensors are described. It is concluded that there is considerable promise for this rapidly expanding technology.