MBE growth of ultrathin Co films on a Si(1 1 1) surface with ultrathin buffer layers

K. Hyomi; Akihiro Murayama; Y. Oka; Shinji Kondoh; Charles M. Falco

doi:10.1016/s0022-0248(01)02188-1

ScienceGate Book Chapters

JOURNAL ARTICLE

MBE growth of ultrathin Co films on a Si(1 1 1) surface with ultrathin buffer layers

K. Hyomi Akihiro Murayama Y. Oka Shinji Kondoh Charles M. Falco

Year: 2002 Journal: Journal of Crystal Growth Vol: 237-239 Pages: 1383-1387 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(01)02188-1

Get Full-Text PDF Get Analytical Report

Keywords:

Materials science Epitaxy Monatomic ion Crystallinity Layer (electronics) Magnetic anisotropy Fabrication Monolayer Condensed matter physics Thin film Crystallography Nanotechnology Chemistry Magnetic field Magnetization Composite material

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.16

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Magnetic properties of thin films

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Physics of Superconductivity and Magnetism

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

MBE growth of ultrathin Co films on a Si(1 1 1) surface with ultrathin buffer layers

Metrics

Topics

Related Documents

Growth of (001) La1.85Sr0.15CuO4 ultrathin films without buffer or cap layers

Alloy formation of Ni ultrathin films on Pt(1 1 1) with Ag buffer layers

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Effect of Ag buffer layer to ultrathin Co films on Si[111] surface

Effect of Ag buffer layer to ultrathin Co films on Si[111] surface