LWIR HgCdTe Detectors Grown on Ge Substrates

M. F. Vilela; D. D. Lofgreen; E. P. Smith; Michael Newton; G. M. Venzor; Jeffrey M. Peterson; J. J. Franklin; M. Reddy; Yen N. Thai; E. A. Patten; S. M. Johnson; Meimei Z. Tidrow

doi:10.1007/s11664-008-0443-2

JOURNAL ARTICLE

LWIR HgCdTe Detectors Grown on Ge Substrates

M. F. Vilela D. D. Lofgreen E. P. Smith Michael Newton G. M. Venzor Jeffrey M. Peterson J. J. Franklin M. Reddy Yen N. Thai E. A. Patten S. M. Johnson Meimei Z. Tidrow

Year: 2008 Journal: Journal of Electronic Materials Vol: 37 (9)Pages: 1465-1470 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-008-0443-2

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Keywords:

Full width at half maximum Materials science Optoelectronics Molecular beam epitaxy Infrared Wafer Fourier transform infrared spectroscopy Detector Heterojunction Germanium Silicon Etch pit density Optics Quantum efficiency Analytical Chemistry (journal) Epitaxy Chemistry Layer (electronics) Etching (microfabrication) Physics Nanotechnology

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Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Infrared Target Detection Methodologies

Physical Sciences → Engineering → Aerospace Engineering

Advanced X-ray and CT Imaging

Physical Sciences → Engineering → Biomedical Engineering

LWIR HgCdTe Detectors Grown on Ge Substrates

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