The temperature dependence of the electrical properties of thin tellurium films

Abstract

The Hall mobility μ and the concentration p of the holes in thin evaporated Te films of 130 Å thickness is investigated as a function of the temperature. From the temperature dependence of the mobility, it is shown that the dominant scatterer of the holes are grain boundaries and that the Petritz-model is valid. From the temperature dependence of the carrier concentration, it is shown that the films are doped with various acceptors, which are uniformly distributed in the forbidden energy gap.