Photoluminescence Study of Li-implantation into ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

T. Yasuda; M. K. Jin; J. M. Gaines; J. L. Merz

doi:10.1557/proc-228-333

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Photoluminescence Study of Li-implantation into ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

T. Yasuda M. K. Jin J. M. Gaines J. L. Merz

Year: 1991 Journal: MRS Proceedings Vol: 228 Publisher: Cambridge University Press

DOI: 10.1557/proc-228-333

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Keywords:

Photoluminescence Materials science Molecular beam epitaxy Annealing (glass) Acceptor Epitaxy Optoelectronics Exciton Ion implantation Luminescence Analytical Chemistry (journal) Ion Nanotechnology Metallurgy Condensed matter physics Chemistry

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Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Perovskite Materials and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Photoluminescence Study of Li-implantation into ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

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