Tungsten-platinum alloy Schottky barriers on n-type GaAs

Abstract

Alloys of tungsten and platinum were studied as a Schottky contact material on n-type GaAs. Schottky barrier heights for two alloy compositions, W50Pt50 and W80Pt20, were measured by current-voltage, capacitance-voltage, and photoresponse techniques of the barrier heights. The values of the barrier heights from the latter two techniques were 0.90±0.02 eV and did not change with annealing at 350 °C for 20 h. However, the value from the I-V technique changed from about 0.6 to 0.7 eV upon annealing. The W50Pt50 alloy was found to be more stable than the W80Pt20 alloy on GaAs.