Light-hole resonant tunnelling through tensile-strained GaInAs quantum wells

Jean‐François Lampin; X. Wallart; J.P. Gouy; F. Mollot

doi:10.1006/spmi.1996.0244

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Light-hole resonant tunnelling through tensile-strained GaInAs quantum wells

Jean‐François Lampin X. Wallart J.P. Gouy F. Mollot

Year: 1998 Journal: Superlattices and Microstructures Vol: 24 (4)Pages: 273-278 Publisher: Elsevier BV

DOI: 10.1006/spmi.1996.0244

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Keywords:

Quantum tunnelling Photocurrent Quantum well Materials science Photoluminescence Diode Resonance (particle physics) Tensile strain Condensed matter physics Optoelectronics Ground state Ultimate tensile strength Physics Atomic physics Optics Laser

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum and electron transport phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Light-hole resonant tunnelling through tensile-strained GaInAs quantum wells

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