Characteristics of graphene-oxide-based flexible and transparent resistive switching memory

Hsiao-Yu Wu; Chun‐Chieh Lin; Chu-Hsuan Lin

doi:10.1016/j.ceramint.2015.03.129

ScienceGate Book Chapters

JOURNAL ARTICLE

Characteristics of graphene-oxide-based flexible and transparent resistive switching memory

Hsiao-Yu Wu Chun‐Chieh Lin Chu-Hsuan Lin Chu-Hsuan Lin Chu-Hsuan Lin

Year: 2015 Journal: Ceramics International Vol: 41 Pages: S823-S828 Publisher: Elsevier BV

DOI: 10.1016/j.ceramint.2015.03.129

Get Full-Text PDF Get Analytical Report

Keywords:

Materials science Resistive touchscreen Optoelectronics Transmittance Graphene Flexibility (engineering) Flexible electronics Resistive random-access memory Flexible display Electrical engineering Nanotechnology Thin-film transistor Layer (electronics) Voltage Engineering

Metrics

Cited By

0.67

FWCI (Field Weighted Citation Impact)

Refs

0.77

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

CCD and CMOS Imaging Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Characteristics of graphene-oxide-based flexible and transparent resistive switching memory

Metrics

Citation History

Topics

Related Documents

Flexible Resistive Switching Memory Device Based on Graphene Oxide

Flexible Resistive Switching Memory Devices Based on Graphene Oxide Polymer Nanocomposite

Graphene-oxide-based resistive switching device for flexible nonvolatile memory application

Retention behavior of graphene oxide resistive switching memory on flexible substrate

Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices