Carbon nanotube thin film transistors on flexible substrates

Abstract

Carbon nanotube thin film transistors (CNT-TFTs) are fabricated on flexible substrates using purified, surfactant-based CNT suspensions, with >95% semiconducting CNT fraction. The TFTs are made up of local bottom-gated structures with aluminum oxide as the gate dielectric. The devices exhibit high ON current densities (0.1 μA/μm) and on-off ratios (∼105) with mobility values ranging from 10-35 cm2/Vs. A detailed numerical model is used to understand the TFT performance and its dependence on device parameters such as TFT channel length, CNT density, and purity.