Amorphous Ge–Se thin films prepared by pulsed-laser deposition

Abstract

Abstract Amorphous Ge x Se1− x , x = 0.22–0.28 thin films were prepared by the pulsed-laser deposition technique. The photo-induced and thermally induced changes of structure and optical gap of the films were studied and discussed. The exposure and annealing causes bleaching of the films, and increases. The structure is influenced only a little by exposure; the annealing causes a decrease in the Raman band amplitudes corresponding to Ge–Ge and Se–Se bonds and to structural units similar to (GeSe) n . This can be ascribed to chemical reactions between fragments formed during pulsed-laser deposition. Acknowledgement The work was supported by the Ministry of Education of the Czech Republic under the project LN 00A028, which is greatly acknowledged.