Numerical modeling of advanced semiconductor devices

W. Lee; S.E. Laux; Massimo V. Fischetti; G. Baccarani; A. Gnudi; J.M.C. Stork; J. Mandelman; E.F. Crabbé; M.R. Wordeman; Fadwa Odeh

doi:10.1147/rd.362.0208

JOURNAL ARTICLE

Numerical modeling of advanced semiconductor devices

W. Lee S.E. Laux Massimo V. Fischetti G. Baccarani A. Gnudi J.M.C. Stork J. Mandelman E.F. Crabbé M.R. Wordeman Fadwa Odeh

Year: 1992 Journal: IBM Journal of Research and Development Vol: 36 (2)Pages: 208-232 Publisher: IBM

DOI: 10.1147/rd.362.0208

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Abstract

Numerical modeling of the electrical behavior of semiconductor devices is playing an increasingly important role in their development. Examples that pertain to advanced MOSFETs and bipolar transistors are presented to illustrate the importance of taking into account three-dimensional as well as nonequilibrium and nonlocal physical phenomena to effectively characterize the electrical behavior of such devices.

Keywords:

Semiconductor device Semiconductor Bipolar junction transistor Transistor Engineering physics Non-equilibrium thermodynamics Electronic engineering Semiconductor device modeling Computer science Electrical engineering Materials science Voltage Optoelectronics Engineering Physics Nanotechnology CMOS

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Topics

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Numerical modeling of advanced semiconductor devices

Abstract

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