Germanium devices for integrated photonic circuits

Abstract

World-wide interest in germanium-on-silicon photonics has grown enormously during the past few years. We report on our study of germanium deposition for which we found that there is potential to engineer films with significant increases in hole mobility. In addition, we report on our development of wet-etch techniques to pattern thin films and to form tapered regions of Ge, both important for the fabrication of Ge photonic devices.