Electronic properties of strained-layer superlattices

Abstract

The electronic properties of semiconductor superlattices can be intentionally varied by changing their quantum well structures, i.e., by changing their layer thicknesses and their layer alloy compositions. New flexibility in varying superlattice electronic properties occurs in strained-layer superlattices, since lattice-mismatched materials can be used for the individual layers. The flexible choice of layer materials and layer thicknesses in strained-layer superlattices makes possible the tailoring of various superlattice electronic properties to desired values. Calculated values for several adjustable material properties in ternary strained-layer superlattices are presented to illustrate this tailorability. The potential advantages of new types of superlattices with more complicated unit cells are also discussed.