JOURNAL ARTICLE

Investigation of single pulse discharge on silicon: crater and plasma characteristics

S. Kanmani SubbuS. DhamodaranJ. Ramkumar

Year: 2012 Journal:   International Journal of Mechatronics and Manufacturing Systems Vol: 5 (5/6)Pages: 455-455   Publisher: Inderscience Publishers

Abstract

Micro electric discharge machining (μ-EDM) process is being used to machine complex shapes on silicon. In specific, dry-μ-EDM can be used to process assembled or semi assembled silicon products. However, there is lack of investigation on the effect of single pulse discharge machining and its plasma characteristics on silicon. Hence, in this paper we investigate the crater and plasma characteristics of single discharge for various conditions such as different electrode diameters and different energy conditions (fixed voltage with varying capacitance and vice-versa). The plasma temperature and electron density have been calculated by line pair method and modified Saha equation respectively. The values are mapped into the plasma classification plot based on log scale of plasma temperature and electron density and realised that at µ-scale EDM plasma was found to be ideal up to 50 mJ energy and tends to become weakly non-ideal plasma for 98 mJ energy. Also from the influence of energy on plasma characteristics it is understood that electron density also plays a major role along with the plasma temperature.

Keywords:
Plasma Materials science Silicon Electron density Electron temperature Capacitance Electrical discharge machining Atomic physics Plasma parameters Kinetic energy Analytical Chemistry (journal) Machining Electrode Optoelectronics Chemistry Metallurgy Physics

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Citation History

Topics

Advanced Machining and Optimization Techniques
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Plasma Diagnostics and Applications
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advanced Surface Polishing Techniques
Physical Sciences →  Engineering →  Biomedical Engineering

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