Growth and Characterization of ZnMgS and ZnMgS/ZnSe Quantum Wells grown on GaAs (100) by Using MBE

C. Bradford; Richard T. Moug; Arran Curran; Damien Thuau; R. J. Warburton; K. A. Prior

doi:10.3938/jkps.53.3000

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Growth and Characterization of ZnMgS and ZnMgS/ZnSe Quantum Wells grown on GaAs (100) by Using MBE

C. Bradford Richard T. Moug Arran Curran Damien Thuau R. J. Warburton K. A. Prior

Year: 2008 Journal: Journal of the Korean Physical Society Vol: 53 (9(5))Pages: 3000-3003 Publisher: Springer Science+Business Media

DOI: 10.3938/jkps.53.3000

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Keywords:

Characterization (materials science) Quantum well Materials science Molecular beam epitaxy Optoelectronics Condensed matter physics Nanotechnology Physics Optics Epitaxy

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Growth and Characterization of ZnMgS and ZnMgS/ZnSe Quantum Wells grown on GaAs (100) by Using MBE

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