Studies on dielectric and hysteresis properties of undoped and aluminium oxide doped ferroelectric cesium vanadate

Abstract

The effect of aluminium doping, as an acceptor impurity on the polycrystalline cesium vanadate has been studied in the temperature range covering their transition points. The dielectric constant is measured by 'comparison of capacities' while the coercive field is evaluated using hysteresis loop. It is seen that the dielectric constant as well as the coercive field are remarkably depending on doping concentrations. They increase significantly up to 0.1 mol% Al2O3, however, decrease for higher concentrations. The Curie temperature of all the samples of cesium vanadate decreases with increasing aluminium concentrations.