JOURNAL ARTICLE

Exciton-phonon coupling in single quantum dots with different barriers

Abstract

The coupling between longitudinal-optical (LO) phonons and neutral excitons in two different kinds of InGaAs pyramidal quantum dots (QDs) embedded in either AlGaAs or GaAs barriers is experimentally examined. We find a slightly weaker exciton-LO-phonon coupling and increased linewidth of the phonon replicas for the QDs with GaAs barriers compared to the ones with AlGaAs barriers. These results, combined with the fact that the LO-phonon energy of the exciton is the same for both kinds of dots, are taken as evidence that the excitons mainly couple to LO-phonons within the QDs.

Keywords:
Exciton Phonon Laser linewidth Condensed matter physics Quantum dot Coupling (piping) Biexciton Materials science Photoluminescence Gallium arsenide Physics Optoelectronics Optics Laser

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Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Semiconductor Lasers and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Quantum and electron transport phenomena
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
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