Highly rectifying p-ZnCo<sub>2</sub>O<sub>4</sub>/n-ZnO heterojunction diodes

Friedrich‐Leonhard Schein; Markus Winter; Tammo Böntgen; Holger von Wenckstern; Marius Grundmann

doi:10.1063/1.4861648

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Highly rectifying p-ZnCo₂O₄/n-ZnO heterojunction diodes

Friedrich‐Leonhard Schein Markus Winter Tammo Böntgen Holger von Wenckstern Marius Grundmann

Year: 2014 Journal: Applied Physics Letters Vol: 104 (2)Pages: 022104-022104 Publisher: American Institute of Physics

DOI: 10.1063/1.4861648

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Abstract

We present oxide bipolar heterojunction diodes consisting of p-type ZnCo2O4 and n-type ZnO fabricated by pulsed-laser deposition. Hole conduction of ZnCo2O4 (ZCO) was evaluated by Hall and Seebeck effect as well as scanning capacitance spectroscopy. Both, ZCO/ZnO and ZnO/ZCO type heterostructures, showed diode characteristics. For amorphous ZCO deposited at room temperature on epitaxial ZnO/Al2O3 thin films, we achieved current rectification ratios up to 2 × 1010, ideality factors around 2, and long-term stability.

Keywords:

Heterojunction Materials science Pulsed laser deposition Diode Optoelectronics Rectification Amorphous solid Thin film Analytical Chemistry (journal) Epitaxy Nanotechnology Chemistry Crystallography

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Highly rectifying p-ZnCo₂O₄/n-ZnO heterojunction diodes

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