Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots

Abstract

A photoluminescence study showed that the self-assembled InGaN quantum dots (QDs) provide strongly localized recombination sites for carriers and that the piezoelectric field-induced quantum-confined Stark effect (QCSE) is small because the height of QDs is too small to separate the wave functions of electrons and holes. The InGaN QD light-emitting diode (LED) showed an emission peak at 400nm, and the peak was redshifted with increasing injection current, indicating a small QCSE. The light output power of an InGaN QD LED increased linearly with increasing injection current due to the strongly localized recombination sites of the InGaN QDs.