Hydrogenated aluminum nitride thin films prepared by r.f. reactive sputtering. Infrared and structural properties

J.C. Loretz; Bernard Despax; Patrick Marti; A. Mazel

doi:10.1016/0040-6090(95)06605-5

ScienceGate Book Chapters

JOURNAL ARTICLE

Hydrogenated aluminum nitride thin films prepared by r.f. reactive sputtering. Infrared and structural properties

J.C. Loretz Bernard Despax Patrick Marti A. Mazel

Year: 1995 Journal: Thin Solid Films Vol: 265 (1-2)Pages: 15-21 Publisher: Elsevier BV

DOI: 10.1016/0040-6090(95)06605-5

Get Full-Text PDF Get Analytical Report

Keywords:

Fourier transform infrared spectroscopy Sputtering Analytical Chemistry (journal) Nitride Thin film Materials science Spectroscopy Infrared spectroscopy Argon Aluminium Infrared Chemistry Layer (electronics) Chemical engineering Optics Metallurgy Nanotechnology

Metrics

Cited By

1.13

FWCI (Field Weighted Citation Impact)

Refs

0.78

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Acoustic Wave Resonator Technologies

Physical Sciences → Engineering → Biomedical Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Hydrogenated aluminum nitride thin films prepared by r.f. reactive sputtering. Infrared and structural properties

Metrics

Citation History

Topics

Related Documents

Carbon nitride thin films prepared by reactive r.f. Magnetron sputtering

Thin stoichiometric silicon nitride prepared by r.f. reactive sputtering

Structural properties of TiO2–WO3 thin films prepared by r.f. sputtering

Structural properties of zinc oxide thin films prepared by r.f. magnetron sputtering

TEM Study of Aluminum Oxynitride Films Prepared by Reactive R.F.-Sputtering