Boron ion implantation on Al-doped ZnO films for OLEDs transparent conducting electrodes

Abstract

B ⁺ -implanted Al-doped ZnO (AZO) films were fabricated by ion implantation with various ion energies and doses for transparent conducting oxide (TCO) electrodes of organic light-emitting diodes (OLEDs). The resistance of the B ⁺ - implanted AZO films was decreased with increasing ion dose. The work function of the implanted films was increased compared to the un-implanted AZO films. All implanted films exhibited high optical transmittance (average transmittance above 87%) in the visible range up to 800nm wavelength. we could control work function, resistance and transmittance individually by changing ion dose and ion energy during implantation.