Temperature dependence of reactive ion beam etching of GaAs with CH4/H2

José M. Villalvilla; C. Santos; JA Vallés-Abarca

doi:10.1016/0042-207x(92)90083-9

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Temperature dependence of reactive ion beam etching of GaAs with CH4/H2

José M. Villalvilla C. Santos JA Vallés-Abarca

Year: 1992 Journal: Vacuum Vol: 43 (5-7)Pages: 591-593 Publisher: Elsevier BV

DOI: 10.1016/0042-207x(92)90083-9

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Keywords:

Activation energy Atmospheric temperature range Etching (microfabrication) Hydrogen Chemistry Reactive-ion etching Ion Ion beam Analytical Chemistry (journal) Range (aeronautics) Adduct Methane Materials science Physical chemistry Organic chemistry Thermodynamics

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Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Temperature dependence of reactive ion beam etching of GaAs with CH4/H2

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