Phase Equilibria in the Ga ₂ O ₃ In ₂ O ₃ System

Abstract

Subsolidus phase relationships in the Ga 2 O 3 –In 2 O 3 system were studied by X‐ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800°–1400°C. The solubility limit of In 2 O 3 in the β‐gallia structure decreases with increasing temperature from 44.1 ± 0.5 mol% at 1000°C to 41.4 ± 0.5 mol% at 1400°C. The solubility limit of Ga 2 O 3 in cubic In 2 O 3 increases with temperature from 4.X ± 0.5 mol% at 1000°C to 10.0 ± 0.5 mol% at 1400°C. The previously reported transparent conducting oxide phase in the Ga‐In‐O system cannot be GaInO 3 , which is not stable, but is likely the In‐doped β‐Ga 2 O 3 solid solution.