JOURNAL ARTICLE

Evaluation of hafnium nitride and zirconium nitride as Hot Carrier absorber

Abstract

The Hot Carrier (HC) solar cell aims to tackle a major loss in conventional solar cells by collecting the hot carriers before they thermalise. The calculated efficiency of the HC solar cell is very close to the limiting efficiency for an infinite tandem cell. The HC solar cell requires an absorber with a low electronic band gap so that it can absorb a large fraction of the solar spectrum. Importantly the absorber must sufficiently slow down the rate of carrier cooling so that adequate time is available to collect the hot carriers. In this work the main mechanisms of carrier cooling and possible approaches to restrict these mechanisms will be discussed. Hafnium nitride and zirconium nitride are presented as potential absorber materials for HC solar cells. Besides a large "phononic band gap" suitable to block the main carrier cooling mechanism, these materials have reasonable abundance to allow large scale implementation. Recent work on the fabrication of these materials at UNSW will also be presented.

Keywords:
Hafnium Materials science Solar cell Optoelectronics Nitride Band gap Wide-bandgap semiconductor Carrier lifetime Multiple exciton generation Zirconium Zirconium nitride Fabrication Gallium nitride Silicon Nanotechnology Metallurgy Titanium nitride

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0.55
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18
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0.74
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Citation History

Topics

Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Silicon Carbide Semiconductor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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