Dielectric properties of sol–gel derived Ta2O5 thin films

S. Yildirim; Kemal Ulutaş; Deniz Değer; Esra Özkan Zayim; İ. Türhan

doi:10.1016/j.vacuum.2004.12.002

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Dielectric properties of sol–gel derived Ta2O5 thin films

S. Yildirim Kemal Ulutaş Deniz Değer Esra Özkan Zayim İ. Türhan

Year: 2005 Journal: Vacuum Vol: 77 (3)Pages: 329-335 Publisher: Elsevier BV

DOI: 10.1016/j.vacuum.2004.12.002

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Keywords:

Dielectric Activation energy Materials science Capacitance Dielectric loss Tantalum pentoxide Atmospheric temperature range Loss factor Ohmic contact Thin film Relaxation (psychology) Analytical Chemistry (journal) Dissipation factor Electrode Composite material Optoelectronics Chemistry Layer (electronics) Thermodynamics Nanotechnology

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Piezoelectric Materials

Physical Sciences → Materials Science → Materials Chemistry

Microwave Dielectric Ceramics Synthesis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Dielectric properties of sol–gel derived Ta2O5 thin films

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