Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

B. Mayer; Daniel Rudolph; Joscha Schnell; Stefanie Morkötter; Julia Winnerl; Julian Treu; Kai Müller; G. Bracher; G. Abstreiter; Gregor Koblmüller; Jonathan J. Finley

doi:10.1038/ncomms3931

JOURNAL ARTICLE

Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

B. Mayer Daniel Rudolph Joscha Schnell Stefanie Morkötter Julia Winnerl Julian Treu Kai Müller G. Bracher G. Abstreiter Gregor Koblmüller Jonathan J. Finley

Year: 2013 Journal: Nature Communications Vol: 4 (1)Pages: 2931-2931 Publisher: Nature Portfolio

DOI: 10.1038/ncomms3931

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Keywords:

Lasing threshold Nanowire Materials science Optoelectronics Infrared Laser linewidth Laser Semiconductor Auger effect Spontaneous emission Semiconductor laser theory Auger Optics Atomic physics Physics

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Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

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