IGBT scaling principle toward CMOS compatible wafer processes

Masahiro Tanaka; Ichiro Omura

doi:10.1016/j.sse.2012.10.020

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JOURNAL ARTICLE

IGBT scaling principle toward CMOS compatible wafer processes

Masahiro Tanaka Ichiro Omura

Year: 2012 Journal: Solid-State Electronics Vol: 80 Pages: 118-123 Publisher: Elsevier BV

DOI: 10.1016/j.sse.2012.10.020

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Keywords:

Wafer Insulated-gate bipolar transistor CMOS Scaling Materials science Optoelectronics Engineering physics Electrical engineering Electronic engineering Engineering Voltage Mathematics

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Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

IGBT scaling principle toward CMOS compatible wafer processes

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