Initial stage of oxidation of hydrogen-terminated silicon surfaces

Takeo Hattori; Takeshi Aiba; Etsuo Iijima; Yohichi Okube; Hiroshi Nohira; Naoto Tate; Masatake Katayama

doi:10.1016/s0169-4332(96)00165-1

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Initial stage of oxidation of hydrogen-terminated silicon surfaces

Takeo Hattori Takeshi Aiba Etsuo Iijima Yohichi Okube Hiroshi Nohira Naoto Tate Masatake Katayama

Year: 1996 Journal: Applied Surface Science Vol: 104-105 Pages: 323-328 Publisher: Elsevier BV

DOI: 10.1016/s0169-4332(96)00165-1

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Keywords:

X-ray photoelectron spectroscopy Torr Silicon Hydrogen Analytical Chemistry (journal) Oxygen Infrared spectroscopy Layer (electronics) Materials science Infrared Spectroscopy Chemistry Absorption (acoustics) Chemical engineering Nanotechnology Optics Metallurgy

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electron and X-Ray Spectroscopy Techniques

Physical Sciences → Materials Science → Surfaces, Coatings and Films

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Initial stage of oxidation of hydrogen-terminated silicon surfaces

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