Electroluminescence and band structure in p-Al_xGa_1−xAs/GaAs_1−yP_y/n-Al_xGa_1−xAs under uniaxial compression

Abstract

Abstract Band structure calculations in p-Al x Ga1−x As/GaAs1−y P y /n-Al x Ga1−x As heterostructure under uni-axial compression in the 1 1 0 direction indicates an increase in the optical energy gap with dE ph/dP ≈ 85 meV GPa−1, a decrease in the quantum well barriers and light hole–heavy hole crossover at uniaxial stress P ≈ 450–500 MPa. The observed increase in electroluminescence intensity and photon energy shift under uni-axial compression are explained by numerical calculation data. Keywords: uniaxial stressIII–V semiconductor heterojunctionselectroluminescenceGaAsP quantum wells Acknowledgements This work was supported by RFBR grant no. 07-02-00866.