JOURNAL ARTICLE

Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency

N. M'GafadH. AmzilD. SayahD. BallutaudM. Barbé

Year: 1999 Journal:   Solid-State Electronics Vol: 43 (5)Pages: 857-864   Publisher: Elsevier BV
Keywords:
Passivation Grain boundary Materials science Silicon Annealing (glass) Aluminium Getter Electron beam-induced current Metallurgy Carrier lifetime Grain boundary diffusion coefficient Optoelectronics Composite material Layer (electronics) Microstructure

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2
Cited By
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FWCI (Field Weighted Citation Impact)
32
Refs
0.14
Citation Normalized Percentile
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Topics

Silicon and Solar Cell Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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