Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency

N. M'Gafad; H. Amzil; D. Sayah; D. Ballutaud; M. Barbé

doi:10.1016/s0038-1101(99)00011-8

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Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency

N. M'Gafad H. Amzil D. Sayah D. Ballutaud M. Barbé

Year: 1999 Journal: Solid-State Electronics Vol: 43 (5)Pages: 857-864 Publisher: Elsevier BV

DOI: 10.1016/s0038-1101(99)00011-8

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Keywords:

Passivation Grain boundary Materials science Silicon Annealing (glass) Aluminium Getter Electron beam-induced current Metallurgy Carrier lifetime Grain boundary diffusion coefficient Optoelectronics Composite material Layer (electronics) Microstructure

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Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency

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