Contact-dependent performance variability of monolayer MoS2 field-effect transistors

Abstract

Using self-consistent quantum transport simulations, we investigate the performance variability of monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with various contact properties. Varying the Schottky barrier in MoS2 FETs affects the output characteristics more significantly than the transfer characteristics. If doped contacts are realized, the performance variation due to non-ideal contacts becomes negligible; otherwise, channel doping can effectively suppress the performance variability in metal-contact devices. Our scaling study also reveals that for sub-10-nm channels, doped-contact devices can be more robust in terms of switching, while metal-contact MoS2 FETs can undergo the smaller penalty in output conductance.