Synthesis of Large-scale GaN Nanowires by Ammoniating Ga2O3/V Films

Zhaozhu Yang; Chengshan Xue; Huizhao Zhuang; Gongtang Wang; Jinhua Chen; Hong Li; Lixia Qin; Zouping Wang

doi:10.1016/s1875-5372(10)60021-5

ScienceGate Book Chapters

JOURNAL ARTICLE

Synthesis of Large-scale GaN Nanowires by Ammoniating Ga2O3/V Films

Zhaozhu Yang Chengshan Xue Huizhao Zhuang Gongtang Wang Jinhua Chen Hong Li Lixia Qin Zouping Wang

Year: 2009 Journal: Rare Metal Materials and Engineering Vol: 38 (3)Pages: 377-379 Publisher: Elsevier BV

DOI: 10.1016/s1875-5372(10)60021-5

Get Full-Text PDF Get Analytical Report

Keywords:

Materials science Nanowire Selected area diffraction High-resolution transmission electron microscopy Transmission electron microscopy Photoluminescence Scanning electron microscope Diffraction Electron diffraction Nanotechnology Crystallography Optoelectronics Optics Composite material Chemistry

Metrics

Cited By

0.41

FWCI (Field Weighted Citation Impact)

Refs

0.58

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Synthesis of Large-scale GaN Nanowires by Ammoniating Ga2O3/V Films

Metrics

Citation History

Topics

Related Documents

Synthesis of GaN nanowires by ammoniating Ga2O3/BN

Synthesis of GaN nanowires by ammoniating Ga2O3/BN

Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films

Fabrication of GaN nanowires by ammoniating Ga2O3/NiCl2 films deposited on Si substrates

Optical and Micro-structural Properties of GaN Nanowires by Ammoniating Ga2O3/Nb Films