Ultra-short pulsed laser ablation of silicon nitride layers: Investigation near threshold fluence

G. Heinrich; Markus Wollgarten; M. Bähr; A. Lawerenz

doi:10.1016/j.apsusc.2012.10.122

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Ultra-short pulsed laser ablation of silicon nitride layers: Investigation near threshold fluence

G. Heinrich Markus Wollgarten M. Bähr A. Lawerenz

Year: 2012 Journal: Applied Surface Science Vol: 278 Pages: 265-267 Publisher: Elsevier BV

DOI: 10.1016/j.apsusc.2012.10.122

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Keywords:

Materials science Silicon Fluence Optoelectronics Wafer Silicon nitride LOCOS Layer (electronics) Hybrid silicon laser Laser Strained silicon Laser ablation Crystalline silicon Optics Nanotechnology Amorphous silicon

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Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Laser Material Processing Techniques

Physical Sciences → Engineering → Computational Mechanics

Advanced Surface Polishing Techniques

Physical Sciences → Engineering → Biomedical Engineering

Ultra-short pulsed laser ablation of silicon nitride layers: Investigation near threshold fluence

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