A fully integrated 60 GHz power amplifier using a standard 90 nm CMOS process is presented. The power amplifier consists of six 2-stage power amplifiers, three 2-way Wilkinson power splitters for parallel amplification, and three 2-way Wilkinson power combiners to combine the output power. The power amplifier achieves again of +20 dB, a P 1dB of +18 dBm and a P sat of +20 dBm with 1.2 V supply.
Dajie ZengHongrui WangDongxu YangHongda ZhengJinying XueYan WangYaohui ZhangZhiping Yu
Debasis DawnS. SarkarPadmanava SenBevin PerumanaDavid YehStéphane PinelJoy Laskar
Yi ZhaoJohn R. LongMarco Spirito
Hyuk ChoiWoo Hee LimHan Lim Lee