Structure and bonding at the CaF2/Si (111) interface

F. J. Himpsel; F. U. Hillebrecht; G. Hughes; J. L. Jordan; U. O. Karlsson; F. R. McFeely; J. F. Morar; D. Rieger

doi:10.1063/1.96478

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Structure and bonding at the CaF2/Si (111) interface

F. J. Himpsel F. U. Hillebrecht G. Hughes J. L. Jordan U. O. Karlsson F. R. McFeely J. F. Morar D. Rieger

Year: 1986 Journal: Applied Physics Letters Vol: 48 (9)Pages: 596-598 Publisher: American Institute of Physics

DOI: 10.1063/1.96478

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Abstract

High resolution core level spectroscopy with synchrotron radiation is used to determine the bonding at the epitaxial CaF2/Si (111) interface. It is found that both Ca and F bond to Si at the interface inducing core level shifts of +0.4 eV and −0.8 eV, respectively. Structural models with an atomically sharp interface are proposed where Ca bonds to the first layer Si and F to the second layer.

Keywords:

Synchrotron radiation Epitaxy Crystallography Materials science Interface (matter) Silicon Layer (electronics) Chemical bond Spectroscopy Synchrotron Core (optical fiber) Chemistry Nanotechnology Optoelectronics Optics Physics Composite material

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Structure and bonding at the CaF2/Si (111) interface

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