Structural and electronic properties of CoSi2 epitaxially grown on Si(111)

J. Derrien

doi:10.1016/0167-2584(86)90438-x

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Structural and electronic properties of CoSi2 epitaxially grown on Si(111)

J. Derrien

Year: 1986 Journal: Surface Science Letters Vol: 168 (1-3)Pages: A115-A116 Publisher: Elsevier BV

DOI: 10.1016/0167-2584(86)90438-x

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Keywords:

Epitaxy Silicide X-ray photoelectron spectroscopy Materials science Crystallography Silicon Optoelectronics Chemistry Nanotechnology Chemical engineering Layer (electronics)

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Materials Characterization Techniques

Physical Sciences → Engineering → Biomedical Engineering

Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Structural and electronic properties of CoSi2 epitaxially grown on Si(111)

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