Preface: Phys. Status Solidi C 7–8/2011

Abstract

Abstract This volume comprises the Proceedings of the International Workshop on Nitride Semiconductors (IWN2010). All published articles have undergone an off‐site peer reviewing process according to the standards of the journal and have been formally accepted. IWN2010 was held at the Marriott Tampa Waterside Hotel & Marina in Tampa, Florida, USA, September 19–24, 2010. This biennial workshop was the sixth following those in Nagoya, Aachen, Pittsburgh, Kyoto and Montreux and will be followed by IWN2012 in Sapporo, Japan. The workshop received some 700 abstracts, had 385 talks, 240 posters and attracted 800 attendees (North America 330, Asia 260, Europe 210) on the topics of Optical and Electronic Properties, Processing and Fabrication, Defect Characterization and Engineering, Structural Analysis, Theory and Simulation, Nanostructures, Light Emitting Devices, Electron Transport Devices, and New Materials and New Device Concepts. Topics of the Rump Session were Group‐III‐Nitrides on silicon; Group‐III‐Nitride challenges for RF electronics; Ideal Group‐III‐Nitride substrate technology; LED roadmap for the internal quantum efficiency; and Group‐III‐Nitride nanowires. Troy, NY, April 2011