Interband tunneling through a heavy hole state

Abstract

We investigated interband tunneling transport through a hole well in five GaSb/AlSb/GaSb/AlSb/InAs type II tunnel devices in which the effect of the variation of barrier and well widths is systematically studied. Low temperature measurements were performed using high magnetic fields applied perpendicular to the current and hydrostatic pressures as external perturbations. A resonant current through the ground heavy hole subband in the GaSb well could be identified for the first time. This examination points out (i) the role of in-plane momentum conservation in determining the resonance onset voltage, and (ii) the occurrence of a shoulder in the current when a maximum of states conducts through a resonant subband.