We have demonstrated the first transistor that simultaneously operated as a transistor and as a laser - the "transistor laser" (2004). The insertion of quantum-wells and tilted charge in the short base of a transistor reduces recombination lifetime below 30 ps which is critical for extending the direct modulation bandwidth of the semiconductor laser towards 100 GHz. Three-port operation expands the use of the transistor laser to electronic-photonic integrated circuits.
M. FengHan Wui ThenFei TanMeng‐Jer WuRohan BamberyN. Holonyak
René HeilmannMarkus GräfeArmando Pérez-LeijaStefan NolteAlexander Szameit
Louay A. EldadaM. LevyR. ScarmozzinoRichard M. Osgood
Linnan JiaHan LinBin ZhangGuiyuan CaoFeng ChenBaohua Jia
Franz X. KärtnerReja AmatyaMohammad AraghchiniJonathan R. BirgeHye Ryung ByunJ. ChenMarcus S. DahlemNicole DiLelloFuwan GanCharles W. HolzwarthJudy L. HoytErich P. IppenAnatol KhiloJungwon KimM. KimAli MotamediJason S. OrcuttM. ParkMichael H. PerrottMiloš A. PopovićRajeev J. RamHenry I. SmithGui-Rong ZhouS. J. SpectorT. M. LyszczarzM. W. GeisD. M. LennonJunghyo YoonMatthew E. GreinR. T. Schulein