Photoelectric properties of anisotype heterojunctions based on wide-gap II-VI compounds

Abstract

On the basis of wide-gap II-VI compounds with strongly scattering lattices, applying the solid-state substitution reaction method, anisotype heterojunctions with low (≈︁ 1012 cm−2) concentration of defects are produced on the interface. The photoelectric properties of diodes are investigated in connection with the technology of their production and the main parameters of the contacting materials and the rectifying structure. Possible applications of the studied heterojunctions in semiconductor optoelectronics are discussed.