Junction depth dependence of breakdown in silicon detector diodes

H. P. Beck; A.A. Carter; J.R. Carter; N.M. Greenwood; A.D. Lucas; D.J. Munday; T.W. Pritchard; D. Robinson; C.D. Wilburn; K. Wyllie

doi:10.1016/0168-9002(96)00015-0

JOURNAL ARTICLE

Junction depth dependence of breakdown in silicon detector diodes

H. P. Beck A.A. Carter J.R. Carter N.M. Greenwood A.D. Lucas D.J. Munday T.W. Pritchard D. Robinson C.D. Wilburn K. Wyllie

Year: 1996 Journal: Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment Vol: 373 (2)Pages: 223-226 Publisher: Elsevier BV

DOI: 10.1016/0168-9002(96)00015-0

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Keywords:

Breakdown voltage Diode Optoelectronics Materials science Avalanche diode Planar Silicon Detector p–n junction Voltage PIN diode Enhanced Data Rates for GSM Evolution Avalanche breakdown Electrical engineering Semiconductor Engineering Computer science Telecommunications

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Junction depth dependence of breakdown in silicon detector diodes

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