Si-nanowire CMOS inverter logic fabricated using gate-all-around (GAA) devices and top-down approach

Kavitha D. Buddharaju; Navab Singh; S.C. Rustagi; Selin Hwee-Gee Teo; G. Q. Lo; N. Balasubramanian; D. L. Kwong

doi:10.1016/j.sse.2008.04.017

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Si-nanowire CMOS inverter logic fabricated using gate-all-around (GAA) devices and top-down approach

Kavitha D. Buddharaju Navab Singh S.C. Rustagi Selin Hwee-Gee Teo G. Q. Lo N. Balasubramanian D. L. Kwong

Year: 2008 Journal: Solid-State Electronics Vol: 52 (9)Pages: 1312-1317 Publisher: Elsevier BV

DOI: 10.1016/j.sse.2008.04.017

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Keywords:

Inverter Nanowire CMOS Transistor Materials science Logic gate Noise (video) Optoelectronics Electronic engineering Voltage AND gate MOSFET Electrical engineering Nanotechnology Computer science Engineering

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Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Si-nanowire CMOS inverter logic fabricated using gate-all-around (GAA) devices and top-down approach

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