Y-junction silicon carbide nanowires

Abstract

Summary form only given. Silicon carbide nanowires with junctions are considered to be of potential value in nanoelectronics. A simple method by catalyst-assisted vapor-liquid-solid reaction for producting Y-junction silicon carbide nanowires is described. The Y-junction silicon carbide nanowires are investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It is found that all the Y-junctions have a predominant branching angle around 90°C, roughly twice the reported bending angle of single bend junctions. The reasons of formation Y-junction may be caused by gas flow fluctuate as reported in reference. This finding provides a possibility for SiC nanowires application in nanoelectronics.