Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility

Abstract

Molybdenum doped (0–1 at. %) indium oxide thin films with high near infrared (NIR) transparency and carrier mobility were deposited on Corning-1737 glass substrates at 400 °C by spray pyrolysis experimental technique. Films with mobility as high as ∼149 cm2/V s were obtained when annealed in vacuum at 550 °C, which also possess carrier concentration of ∼1×1020 cm−3 and resistivity as low as ∼4.0×10−4 Ω cm. Further, both the average visible transmittance (500–800 nm) and the average NIR transmittance are >83%. This clearly shows that the transmittance is extended well into the NIR region.